IRG4BH20K-L International Rectifier, IRG4BH20K-L Datasheet - Page 5
![IGBT UFAST 1200V 11A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRG4BH20K-L
Manufacturer Part Number
IRG4BH20K-L
Description
IGBT UFAST 1200V 11A TO-262
Manufacturer
International Rectifier
Datasheet
1.IRG4BH20K-L.pdf
(8 pages)
Specifications of IRG4BH20K-L
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.3V @ 15V, 5A
Current - Collector (ic) (max)
11A
Power - Max
60W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BH20K-L
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4BH20K-L
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRG4BH20K-LPBF
Manufacturer:
TI
Quantity:
1 200
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
0.95
0.90
0.85
0.80
0.75
0.70
800
600
400
200
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25
= 960V
= 15V
= 11A
C res
C ies
C oes
R
V
10
G
CE
R
°
, Gate Resistance (Ohm)
V
C
C
C
G
C
Resistance
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
, Gate Resistance (
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
20
16
12
0.1
10
8
4
0
1
Fig. 10 - Typical Switching Losses vs.
0
-60 -40 -20
V
I
R
V
V
CC
C
GE
CC
Fig. 8 - Typical Gate Charge vs.
G
= 400V
= 11A
= 15V
= 960V
= 50Ohm
5
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Q , Total Gate Charge (nC)
Junction Temperature
T
J
G
J
, Junction Temperature ( °C )
0
10
20
40
IRG4BH20K-L
15
60
80 100 120 140 160
20
I =
I =
I =
C
C
C
°
25
2.5
10
5
A
A
A
5
30