IRG4BC20SD International Rectifier, IRG4BC20SD Datasheet - Page 2

• Manufacturer Part Number: IRG4BC20SD
• Description: IGBT W/DIODE 600V 19A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC20SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 10A
• Current - Collector (ic) (max): 19A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *IRG4BC20SD

IRG4BC20SD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
d(off)
f
d(on)
d(off)
f
r
r
rr
rr
V
V
fe
E
(BR)CES
CE(on)
GE(th)
on
off
ts
ts
FM
ies
oes
res
2
g
gc
(rec)M
rr
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current —
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.75
1.40
1.85
1.44
0.32
2.58
2.90
4.33
480
980
800
550
124
240
210
690 1040
-11
5.8
1.4
1.3
4.3
7.5
7.1
3.5
4.5
27
10
62
32
64
35
39
37
55
65
—
—
—
—
—
1700
±100
250
730
138
360
1.6
6.0
1.7
1.6
6.5
4.5
5.0
8.0
—
40
15
—
55
90
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
pF
nC
ns
ns
ns
V
V
S
V
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11,18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 10A
= 19A
= 10A, T
= 8.0A
= 8.0A, T
= 10A
= 10A, V
= 10A, V
= 125°C
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= V
= V
= 100V, I
= ±20V
= 15V
= 0V
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 400V
= 15V, R
= 15V, R
= 30V
GE
GE
, I
, I
C
C
J
CC
CC
J
CE
C
C
CE
See Fig.
See Fig.
= 150°C
= 250µA
= 1.0mA
See Fig.
See Fig.
Conditions
= 150°C
Conditions
G
G
C
= 250µA
= 250µA
= 480V
= 480V
= 600V
= 600V, T
See Fig. 10,11, 18
= 50
= 50
= 10A
14
15
17
16
See Fig. 8
www.irf.com
See Fig. 7
V
See Fig. 2, 5
See Fig. 13
di/dt = 200Aµs
V
J
GE
I
R
= 150°C
F
= 200V
= 8.0A
= 15V