IRG4PH30K International Rectifier, IRG4PH30K Datasheet

IGBT UFAST 1200V 20A TO-247AC

IRG4PH30K

Manufacturer Part Number
IRG4PH30K
Description
IGBT UFAST 1200V 20A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH30K

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.2V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4PH30K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH30K
Manufacturer:
IR
Quantity:
505
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IRG4PH30K
Manufacturer:
IR
Quantity:
12 500
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Manufacturer:
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Quantity:
12 000
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Part Number:
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Part Number:
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Company:
Part Number:
IRG4PH30KPBF
Quantity:
5 000
Benefits
Features
Features
Features
Features
Features
Thermal Resistance
Absolute Maximum Ratings
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBT's offer highest power
• This part replaces the IRGPH30K and IRGPH30M
V
I
I
I
I
t
V
E
P
P
T
T
R
R
R
Wt
LM
www.irf.com
C
C
CM
sc
V
Diode and IGBT
t
switching speed
distribution and higher efficiency than previous
generations
HEXFRED
minimum EMI / Noise and switching losses in the
density motor controls possible
devices
ARV
J
STG
CES
GE
D
D
θJC
sc
θCS
θJA
@ T
@ T
GE
@ T
@ T
=10µs, V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
CC
ultrafast, ultrasoft recovery diodes for
= 720V , T
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
J
= 125°C,
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case)
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to +150
IRG4PH30K
Max.
TO-247AC
1200
±20
121
100
20
10
40
40
10
42
Short Circuit Rated
V
@V
CE(on) typ.
V
Max.
UltraFast IGBT
GE
–––
–––
1.2
CES
40
= 15V, I
= 1200V
= 3.10V
C
= 10A
Units
g (oz)
°C/W
2/7/2000
Units
µs
mJ
°C
W
A
V
V
1

Related parts for IRG4PH30K

IRG4PH30K Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH30K Short Circuit Rated UltraFast IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 1200 20 ...

Page 2

... IRG4PH30K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... Fig Typical Output Characteristics www.irf.com 50 5° ° rive ified Po wer D issipat Frequency (kHz) (Load Current = I of fundamental) RMS 100 150 Fig Typical Transfer Characteristics IRG4PH30K Tria n gu lar w ave : lta rate d 10 100 °  ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4PH30K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.5 4.0 3.5 3.0 2.5 2 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com  400V CC C SHORTED I = 10A 100 0 Fig Typical Gate Charge vs.  100 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PH30K Total Gate Charge (nC) G Gate-to-Emitter Voltage 23 Ω = Ohm = 15V = 960V  100 120 140 160 ° Junction Temperature ( ...

Page 6

... IRG4PH30K  10.0 23 Ω Ohm 150 C ° 960V 15V 8.0 GE 6.0 4.0 2.0 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  100 SAFE OPERATING AREA 20V o = 125 C 10 100 1000 , Collector-to-Emitter Voltage (V) CE Fig Turn-Off SOA www.irf.com 10000 ...

Page 7

... Clamped Inductive Load Test Circuit D river* 50V 1000V www.irf.com 960V R Fig. 13b - . ff t=5µ IRG4PH30K 960V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4PH30K Case Outline and Dimensions — TO-247AC (. (. (. (. (. (. (. (. (. (. (. (. CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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