IRG4RC10SD International Rectifier, IRG4RC10SD Datasheet - Page 5

• Manufacturer Part Number: IRG4RC10SD
• Description: IGBT STD W/DIODE 600V 8.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 8A
• Current - Collector (ic) (max): 14A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10SD

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Fig. 9 - Typical Switching Losses vs. Gate
3.60
3.55
3.50
3.45
3.40
3.35
3.30
500
400
300
200
100
0
0
V
V
T
Fig. 7 - Typical Capacitance vs.
I
1
J
C
CC
GE
= 480V
= 15V
= 25 C
= 8A
C ies
C oes
C res
R
V
20
Collector-to-Emitter Voltage
G
CE
R
°
G
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
, Gate Resistance (Ω)
GE
ies
res
oes
=
=
=
=
40
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
60
C
ce
SHORTED
80
100
100
100
0.1
10
20
15
10
1
5
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0
R
V
V
V
I
GE
CC
CC
C
G
Fig. 8 - Typical Gate Charge vs.
= 400V
= 8A
= 15V
= 480V
= Ohm
Junction Temperature
T , Junction Temperature ( C )
Q , Total Gate Charge (nC)
J
G
Ω
5
0
Gate-to-Emitter Voltage
IRG4RC10SD
20 40 60
10
80 100 120 140 160
15
I =
I =
I =
C
C
C
°
16
8
4
A
A
A
5
20