IRG4RC20F International Rectifier, IRG4RC20F Datasheet - Page 5

DIODE IGBT 600V D-PAK

IRG4RC20F

Manufacturer Part Number
IRG4RC20F
Description
DIODE IGBT 600V D-PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC20F

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
22A
Power - Max
66W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4RC20F

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4RC20F
Manufacturer:
IR
Quantity:
2 406
Part Number:
IRG4RC20F
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRG4RC20F
Quantity:
15 045
Part Number:
IRG4RC20FPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRG4RC20FPBF
Quantity:
55 000
Part Number:
IRG4RC20FTR
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
0.72
0.71
0.70
0.68
0.67
0.66
1000
800
600
400
200
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 480V
= 15V
= 25 C
= 9.0A
R
V
10
G
CE
°
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
C res
C ies
C oes
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
0.1
10
1
20
15
10
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
5
0
R
V
V
0
GE
CC
Fig. 8 - Typical Gate Charge vs.
G
V
I
CC
C
= 15V
= 480V
= 50Ohm
= 400V
= 12A
Gate-to-Emitter Voltage
50
T , Junction Temperature ( C )
Junction Temperature
5
J
Q , Total Gate Charge (nC)
G
0
10
20
IRG4RC20F
40
15
60
80 100 120 140 160
20
I =
I =
I =
C
C
C
°
25
24
12
6
A
A
A
5
30

Related parts for IRG4RC20F