MMBFU310LT1G ON Semiconductor, MMBFU310LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBFU310LT1G
• Description: JFET SS N-CH 25V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBFU310LT1G

• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2.5V @ 1nA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V (VGS)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 225mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: 25 V
• Drain Current (idss At Vgs=0): 24 mA to 60 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Transistor Type: JFET
• Breakdown Voltage Vbr: -25V
• Zero Gate Voltage Drain Current Idss: 24mA To 60mA
• Gate-source Cutoff Voltage Vgs(off) Max: -6V
• Power Dissipation Pd: 225mW
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBFU310LT1GOS; MMBFU310LT1GOS; MMBFU310LT1GOSTR

100 k
1.0 k
10 k
100
180°
170°
160°
150°
140°
130°
q
0.01
and Forward Transconductance vs Drain Current
21
6.0
Figure 3. Common−Source Output Admittance
30
24
18
12
, q
0
100
Figure 5. Common−Gate Y Parameter
11
50°
40°
30°
20°
10°
0°
Figure 7. Common−Gate Y Parameter
100
V
I
T
D
A
DS
= 10 mA
= 25°C
Magnitude vs Frequency
= 10 V
Phase−Angle vs Frequency
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
200
f, FREQUENCY (MHz)
q
Y
f, FREQUENCY (MHz)
I
12
200
D
os
, DRAIN CURRENT (mA)
300
q
11
300
Y
Y
Y
q
V
I
T
D
q
A
21
22
11
500
22
DS
21
= 10 mA
= 25°C
V
V
GS(off)
GS(off)
= 10 V
Y
500
12
700
Y
fs
= - 2.3 V =
= - 5.7 V =
700
1000
3.0
2.4
1.8
1.2
0.6
1000
-
- 20°
- 40°
- 60°
- 80°
- 100°
- 120°
- 140°
- 160°
- 180°
- 200°
20°
q
12
http://onsemi.com
Y
, q
fs
22
87°
86°
85°
84°
83°
82°
100
1.0 k
10
1.0
3
0.85
0.79
0.73
0.67
0.61
0.55
|S
21
7.0
4.0
1.0
- 100°
- 120°
10
- 20°
- 40°
- 60°
- 80°
|, |S
0
q
10
0.45
0.39
0.33
0.27
0.21
0.15
11
Figure 6. Common−Gate S Parameter
11
, q
|
100
120°
100°
12
9.0
80°
60°
40°
20°
Figure 4. On Resistance and Junction
Capacitance vs Gate−Source Voltage
100
Figure 8. S Parameter Phase−Angle
V
I
T
D
A
Magnitude vs Frequency
DS
= 10 mA
8.0
= 25°C
q
V
q
= 10 V
21
GS
12
, GATE SOURCE VOLTAGE (VOLTS)
q
11
200
f, FREQUENCY (MHz)
7.0
200
f, FREQUENCY (MHz)
V
I
T
D
vs Frequency
A
DS
6.0
= 10 mA
= 25°C
300
S
= 10 V
S
S
11
21
12
300
5.0
S
22
q
500
22
4.0
500
700
3.0
q
11
700
q
1000
21
2.0
0.060
0.048
0.036
0.024
0.012
|S
C
1000
gd
12
R
0
- 20°
- 40°
- 60°
- 80°
- 100°
1.0
q
|, |S
DS
21
C
1.00
0.98
0.96
0.94
0.92
, q
22
0.90
gs
|
22
0
120
96
72
48
24
0