2SK33720SL Panasonic - SSG, 2SK33720SL Datasheet
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2SK33720SL
Manufacturer Part Number
2SK33720SL
Description
JFET N-CH 20V 2MA SSS-MINI-3P
Manufacturer
Panasonic - SSG
Datasheet
1.2SK33720SL.pdf
(3 pages)
Specifications of 2SK33720SL
Current - Drain (idss) @ Vds (vgs=0)
107µA @ 2V
Drain To Source Voltage (vdss)
20V
Current Drain (id) - Max
2mA
Fet Type
N-Channel
Mounting Type
Surface Mount
Package / Case
SSS Mini3-F1
Power - Max
100mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK33720SLTR
Silicon Junction FETs (Small Signal)
2SK3372
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
• High mutual conductance g
• Low noise voltage NV
Noise voltage
Drain-source voltage (Gate open)
Gate-drain voltage (Source open)
Drain-source current (Gate open)
Gate-drain current (Source open)
Gate-source current (Drain open)
Power dissipation
Operating ambient temperature
Storage temperature
Drain current
Drain-source cutoff current
Mutual conductance
Voltage gain
Voltage gain difference
Electrostatic discharge
2. * 1: I
* 2: ∆G
* 3: Test method of electrostatic discharge are based on Standard of Electronic Industries Association of Japan EIAJ ED-4701
Environmental and endurance test methods for semiconductor devices. Judgment standard is product specification.
Parameter
D
Parameter
*1
is assured for I
V
. f is assured for AQL 0.065%. (The measurement method is used by source-grounded circuit.)
* 3
DSS
m
.
G
G
∆G
a
Symbol
Symbol
V2
V1
= 25°C ± 3°C
V
V
I
ESD
I
I
I
T
G
G
G
T
NV
GDO
DSO
GSO
P
g
I
DSS
GDO
a
DSO
V
− G
− G
opr
stg
D
V1
V2
V3
m
D
. f
= 25°C
V1
V3
* 2
−55 to +125
−20 to +80
Rating
V
V
V
V
C
V
C
V
C
V
C
V
C
C = 200 pF, R = 0 Ω
100
20
20
DS
O
O
O
O
O
DS
D
D
D
D
D
D
2
2
2
= 5 pF, e
= 5 pF, A-Curve
= 5 pF, e
= 5 pF, e
= 5 pF, e
SJF00032BED
= 2.0 V, V
= 2.0 V, R
= 2.0 V, R
= 12 V, R
= 1.5 V, R
= 2.0 V, R
= 2.0 V, R
= 2.0 V, R
G
G
G
G
Conditions
= 10 mV, f = 1 kHz to 70 Hz
Unit
mW
mA
mA
mA
D
°C
°C
D
V
V
D
D
= 10 mV, f = 1 kHz
= 10 mV, f = 1 kHz
D
= 10 mV, f = 1 kHz
D
GS
= 2.2 kΩ ± 1%, V
D
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 2.2 kΩ ± 1%
= 0, f = 1 kHz
Marking Symbol: 1H
0.23
GS
+0.05
–0.02
= 0
0.33
5˚
+0.05
–0.02
(0.40)
3
0.80
1.20
±200
1
−7.5
−4.0
−8.0
Min
100
107
660
0
0
(0.40)
±0.05
±0.05
2
1 600
−4.7
−1.5
−5.0
Typ
0
SSSMini3-F1 Package
Max
460
470
1.7
4.0
1.7
4
0.10
1: Drain
2: Source
3: Gate
+0.05
–0.02
Unit: mm
Unit
µA
µA
µV
µS
dB
dB
V
1