J110 Fairchild Semiconductor, J110 Datasheet - Page 2

• Manufacturer Part Number: J110
• Description: IC SWITCH N-CHAN 25V 10MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of J110

• Current - Drain (idss) @ Vds (vgs=0): 10mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 500mV @ 10nA
• Resistance - Rds(on): 18 Ohm
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 625mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 25 V
• Gate-source Cutoff Voltage: - 4 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Resistance Drain-source Rds (on): 18 Ohms
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Peak Reflow Compatible (260 C): Yes
• Breakdown Voltage Vbr: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Gate-source Cutoff Voltage Vgs(off) Max: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: J110FS

©2002 Fairchild Semiconductor Corporation
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6”
P
R
R
D
Symbol
JC
JA
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.6”
0.06"
Parameter
T
A
=25 C unless otherwise noted
J108 - 110
625
125
357
5.0
Max.
*MMBFJ108
350
556
2.8
Rev. B1, November 2002
mW/ C
Units
mW
C/W
C/W