MMBF5434 Fairchild Semiconductor, MMBF5434 Datasheet - Page 3

• Manufacturer Part Number: MMBF5434
• Description: IC SWITCH N-CHANNEL SUPERSOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBF5434

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 1V @ 3nA
• Input Capacitance (ciss) @ Vds: 30pF @ 10V (VGS)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 350 mW
• Gate-source Breakdown Voltage: - 25 V
• Gate-source Cutoff Voltage: - 4 V
• Drain Current (idss At Vgs=0): 2 mA to 20 mA
• Resistance Drain-source Rds (on): 10 Ohms
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Current Rating: 30mA
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Results/Discussion
Test: (Autoclave)
Lot
Q20070473AAACLV
Q20070473ABACLV
Q20070473ACACLV
Q20070473BAACLV
Q20070473BBACLV
Q20070473BCACLV
Q20070473CAACLV
Q20070473DAACLV
Q20070473EAACLV
Q20070473FAACLV
Test: (High Humidity, High Temp, Rev. Bias)
Lot
Q20070473CAH3TRB
Q20070473FAH3TRB
Q20070473FBH3TRB
Test: (High Temperature Gate Bias)
Lot
Q20070473AAHTGB
Q20070473BAHTGB
Device
FDC658AP
FDN338P
Device
FDC637BNZ
FDC638APZ
Device
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FAN2558SX
FDC365P
FDN338P
168-HOURS
0/77
0/77
0/77
168-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
500-HOURS
0/77
1000-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
Failure Code
Failure Code
Failure Code
Pg. 3