2SK3666-3-TB-E SANYO, 2SK3666-3-TB-E Datasheet

MOSFET N-CH 30V 10MA 3CP

2SK3666-3-TB-E

Manufacturer Part Number
2SK3666-3-TB-E
Description
MOSFET N-CH 30V 10MA 3CP
Manufacturer
SANYO
Datasheet

Specifications of 2SK3666-3-TB-E

Current - Drain (idss) @ Vds (vgs=0)
1.2mA @ 10V
Drain To Source Voltage (vdss)
30V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
180mV @ 1µA
Input Capacitance (ciss) @ Vds
4pF @ 10V
Resistance - Rds(on)
200 Ohm
Mounting Type
Surface Mount
Package / Case
3-CP
Power - Max
200mW
Transistor Type
JFET
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Idss
600µA To 6mA
Gate-source Cutoff Voltage Vgs(off) Max
2.2V
Power Dissipation Pd
200mW
Transistor Case Style
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1107-2
Ordering number : EN8158A
2SK3666
Applicatins
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
* : The 2SK3666 is classified by I DSS as follows : (unit : mA).
Marking : JK
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Small I GSS .
Small Ciss
Rank
I DSS
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
0.6 to 1.5
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2
SANYO Electric Co.,Ltd. Semiconductor Company
1.2 to 3.0
3
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
V (BR)GDS
R DS (on)
V GS (off)
Symbol
Symbol
V GDS
V DSX
I GSS
I DSS
Ciss
Crss
Tstg
P D
yfs
I G
I D
Tj
2.5 to 6.0
I G =- -10 A, V DS =0V
V GS =--20V, V DS =0V
V DS =10V, I D =1 A
V DS =10V, V GS =0V
V DS =10V, V GS =0V, f=1kHz
V DS =10V, V GS =0V, f=1MHz
V DS =10V, V GS =0V, f=1MHz
V DS =10mV, V GS =0V
4
2SK3666
D2805GM IM MS TB-00001984 / 31505GB TS IM TA-100303
Conditions
Conditions
min
--0.18
0.6*
--30
3.0
Ratings
typ
--0.95
Ratings
200
6.5
1.1
4
--55 to +150
max
200
150
--1.0
--2.2
--30
6.0*
30
10
10
No.8158-1/4
Unit
mW
Unit
mA
mA
mA
mS
nA
pF
pF
V
V
V
V
C
C

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2SK3666-3-TB-E Summary of contents

Page 1

... Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance * : The 2SK3666 is classified by I DSS as follows : (unit : mA). Rank 2 I DSS 0.6 to 1.5 1.2 to 3.0 Marking : JK Any and all SANYO products described or contained herein do not have specifications that can handle ...

Page 2

... Package Dimensions unit : mm 7013A-011 2.9 0 0.95 0 Source 2 : Drain 3 : Gate SANYO : 5.0 4.0 3.0 2.0 1 1.0 2.0 3.0 Drain-to-Source Voltage --1.50 --1.25 --1.00 --0.75 Gate-to-Source Voltage 2SK3666 4.0 5.0 0 ITR00633 =10V --0.50 --0.25 0 --1.2 ITR00635 Drain-to-Source Voltage ITR00634 =10V --1.0 --0.8 --0.6 --0 ...

Page 3

... Drain Current, I DSS -- DSS 1 1.0 Drain Current, I DSS -- mA Ciss -- 1 1.0 10 Drain-to-Source Voltage 240 200 160 120 100 Ambient Temperature 2SK3666 =10V 0.1 ITR00637 100n V DS =10V V GS =0V I GDL 3 f=1kHz 10n 100p 3 10p ITR00639 =0V f=1MHz 1 1.0 ITR00641 120 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. 2SK3666 PS No.8158-4/4 ...

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