FJN598JBBU Fairchild Semiconductor, FJN598JBBU Datasheet - Page 2

• Manufacturer Part Number: FJN598JBBU
• Description: IC FET N-CHAN SI -20V 1MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of FJN598JBBU

• Current - Drain (idss) @ Vds (vgs=0): 100µA @ 5V
• Current Drain (id) - Max: 1mA
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 20V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 1µA
• Input Capacitance (ciss) @ Vds: 3.5pF @ 5V
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 150mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
-
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
450
400
350
300
250
200
150
100
-
0.1
-
10
50
-1.6
1
0
0
-1.4
1
V
Figure 5. V
GS
V
0.1
2
GS
[V], GATE-SOURCE VOLTAGE
-1.2
V
Figure 1. I
Figure 3. I
= 0
I
DS
DSS
[V], DRAIN-SOURCE VOLTAGE
3
[mA], DRAIN CURRENT
V
-1.0
GS
= -0.1V
4
GS(
V
-0.8
GS
D
5
D
= -0.2V
off)-I
-V
-V
V
GS
DS
-0.6
GS
= -0.3V
6
DSS
1
7
-0.4
I
DSS
V
= 200 A
8
V
DS
V
GS
-0.2
I
D
DS
= 5V
= -0.4V
= 1 A
= 5V
9
0.0
10
1000
900
800
700
600
500
400
300
200
100
0.1
10
100
1
0
10
1
0
1
V
GS
V
0.1
V
2
GS
Figure 4. y
1
= 0
V
V
DS
Figure 6. C
V
GS
DS
= -0.1V
[V], DRAIN-SOURCE VOLTAGE
GS
Figure 2. I
I
DSS
[V], DRAIN-SOURCE VOLTAGE
= -0.3V
3
= -0.2V
[mA], DRAIN CURRENT
V
GS
4
= -0.4V
5
FS
ISS
D
-V
-V
V
-I
6
DS
GS
DSS
DS
= -0.5V
1
10
7
I
DSS
= 500 A
8
V
GS
V
V
f=1kHz
DS
GS
= -0.6V
Rev. B1, November 2002
9
= 5V
= 0
10