2N7002V Fairchild Semiconductor, 2N7002V Datasheet - Page 3
![MOSFET N-CH SOT-563F](/photos/5/42/54213/2n7002v_sml.jpg)
2N7002V
Manufacturer Part Number
2N7002V
Description
MOSFET N-CH SOT-563F
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N7002V.pdf
(6 pages)
Specifications of 2N7002V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
280mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.28 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002VTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002V
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
2N7002VA-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
2N7002VA-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
2N7002VAC-7
Manufacturer:
DIDDES
Quantity:
20 000
Company:
Part Number:
2N7002VAC-7-F
Manufacturer:
DIODES
Quantity:
3 000
© 2010 Fairchild Semiconductor Corporation
2N7002V/VA Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation with
Figure 5. Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
-50
2
0
V
Temperature
DS
1
= 10V
2
V
3
0
25
GS
V
V
T
DS
GS
3
J
o
= 10V
V
I
. JUNCTION TEMPERATURE(
C
D
T
. DRAIN-SOURCE VOLTAGE (V)
GS
. GATE-SOURCE VOLTAGE (V)
J
= 500 mA
= -25
= 10V
4
o
C
5V
5
50
4
6
75
4V
o
C
7
100
125
5
3V
8
o
C
o
C)
150
9
o
2V
C
150
10
6
3
Figure 2. On-Resistance Variation with Gate
Figure 4. On-Resistance Variation with
Figure 6. Gate Threshold Variation with
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
-50
3.0
2.5
2.0
1.5
1.0
0.0
2
Voltage and Drain Current
Gate-Source Voltage
I
Temperature
D
= 50 mA
V
GS
0.2
= 3V
0
4
T
I
D
I
V
J
D
. JUNCTION TEMPERATURE(
= 0.25 mA
. DRAIN-SOURCE CURRENT(A)
GS
. GATE-SOURCE VOLTAGE (V)
0.4
I
D
= 500 mA
4V
50
6
I
D
0.6
= 1 mA
7V
4.5V
8V
100
8
5V
0.8
o
V
C)
9V
www.fairchildsemi.com
GS
6V
= V
10V
DS
1.0
10
150