BSS138DW-7-F Diodes Inc, BSS138DW-7-F Datasheet - Page 2

• Manufacturer Part Number: BSS138DW-7-F
• Description: MOSFET DUAL N-CHAN 50V SC70-6
• Manufacturer: Diodes Inc

Specifications of BSS138DW-7-F

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS138DW-FDITR

BSS138DW
Document number: DS30203 Rev. 12 - 2
0.65
2.45
2.25
1.65
1.45
1.25
1.05
0.85
2.05
1.85
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
0.6
0.5
0.4
0.3
0.2
0.1
8
6
5
4
3
7
2
0
1
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
-55
0
0
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
V
T = 25 C
j
GS
0.02 0.04 0.06 0.08
1
= 2.5V
V , DRAIN-SOURCE VOLTAGE (V)
°
T , JUNCTION TEMPERATURE (°C)
DS
j
2
-5
I , DRAIN-CURRENT (A)
D
3
4
45
5
0.1
6
V
I = 0.5A
GS
D
V
I = 0.075A
= 10V
D
GS
0.12
7
95
= 4.5V
V
V
150 C
V
V
GS
GS
8
GS
GS
V
0.14
GS
°
25 C °
-55 C °
= 3.25V
= 3.5V
= 2.75V
= 3.0V
= 2.5V
9
0.16
145
10
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2 of 5
1.8
1.6
1.4
1.2
0.8
0.4
0.2
0.8
0.6
0.5
0.4
0.3
0.6
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
0.7
0.2
0.1
9
8
7
6
4
3
2
5
0
1
2
0
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0
1
-55
0
0
V
V
0.5
-25
DS
GS
T , JUNCTION TEMPERATURE (°C)
0.05
V
= 1V
= 2.75V
j
GS
Fig. 2 Transfer Characteristics
, GATE-SOURCE VOLTAGE (V)
1
I , DRAIN-CURRENT (A)
D
0
1.5
0.1
25
2
50
0.15
2.5
75
3
100
0.2
BSS138DW
3.5
-55 C °
25 C °
150 C °
© Diodes Incorporated
September 2009
125
-55 C °
4
150 C °
25 C °
0.25
4.5
150