DMN601DWK-7 Diodes Inc, DMN601DWK-7 Datasheet - Page 3

• Manufacturer Part Number: DMN601DWK-7
• Description: MOSFET N-CH DL 60V 200MW SOT-363
• Manufacturer: Diodes Inc

Specifications of DMN601DWK-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.305 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMN601DWK-7-F; DMN601DWK-FDITR; DMN601DWK-FDITR; DMN601DWK-FTR; DMN601DWK-FTR; DMN601DWKDITR

Ordering Information
Marking Information
Notes:
Date Code Key
DMN601DWK
Document number: DS30656 Rev. 5 - 2
Month
Code
Code
Year
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
0
Fig. 7
DMN601DWK-7
V
Pulsed
Part Number
GS
= 10V
T
CH
Static Drain-Source On-State Resistance
, CHANNEL TEMPERATURE ( C)
Jan
vs. Channel Temperature
1
2005
S
(Note 6)
Feb
2
2006
T
Mar
S
D
2
2
K7K YM
3
YM
G
G
I = 300mA
K7K
D
1
2
I = 150mA
°
D
Apr
4
2007
D
S
1
1
U
1
www.diodes.com
May
K7K = Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
5
SOT-363
Case
3 of 4
2008
V
Jun
6
Jul
7
2009
W
Fig.10 Forward Transfer Admittance
Aug
8
I , DRAIN CURRENT (A)
D
2010
vs. Drain Current
X
Sep
9
3000/Tape & Reel
Packaging
Oct
O
2011
Y
DMN601DWK
Nov
N
© Diodes Incorporated
December 2007
2012
Z
1
Dec
D