DMC2004DWK-7 Diodes Inc, DMC2004DWK-7 Datasheet - Page 2

• Manufacturer Part Number: DMC2004DWK-7
• Description: MOSFET DUAL COMPL PAIR SOT-363
• Manufacturer: Diodes Inc

Specifications of DMC2004DWK-7

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA, 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMC2004DWKDITR

Electrical Characteristics N-CHANNEL – Q
Electrical Characteristics P-CHANNEL – Q
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
DMC2004DWK
Document number: DS31114 Rev. 4 - 2
4.
Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
www.diodes.com
2 @T
1
Symbol
R
Symbol
R
BV
V
BV
V
DS (ON)
DS (ON)
I
I
C
I
I
C
2 of 8
@T
|Y
V
C
C
|Y
V
C
C
GS(th)
GS(th)
DSS
GSS
DSS
GSS
oss
oss
SD
rss
SD
rss
DSS
iss
DSS
iss
fs
fs
A
|
|
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Min
Min
200
-0.5
200
-0.5
-20
0.5
0.5
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
Typ
0.4
0.5
0.7
0.7
1.1
1.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
± 1.0
Max
0.55
0.70
0.90
Max
150
-1.0
-1.0
-1.2
175
± 1
1.0
1.2
0.9
1.4
2.0
25
20
30
20
⎯
⎯
⎯
⎯
1
Unit
Unit
mS
mS
μA
μA
pF
pF
pF
μA
μA
pF
pF
pF
V
V
Ω
V
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
DMC2004DWK
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
= 0V, I
= 16V, V
= 0V, I
= -20V, V
= ±4.5V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
=10V, I
= 0V, I
= 16V, V
= ±4.5V, V
= V
= -4.5V, I
= -2.5V, I
= -1.8V, I
=10V, I
= 0V, I
= -16V, V
Test Condition
Test Condition
GS
GS
© Diodes Incorporated
September 2007
, I
, I
D
D
S
S
D
D
D
D
= 10μA
= -250μA
= 115mA
= -115mA
GS
D
D
D
GS
= 0.2A
= 0.2A
GS
D
D
D
GS
= 250μA
= -250μA
= 540mA
= 500mA
= 350mA
DS
DS
= -430mA
= -300mA
= -150mA
= 0V
= 0V
= 0V
= 0V
= 0V
= 0V