DMP57D5UV-7 Diodes Inc, DMP57D5UV-7 Datasheet - Page 3

MOSFET P-CH DUAL 50V SOT563

DMP57D5UV-7

Manufacturer Part Number
DMP57D5UV-7
Description
MOSFET P-CH DUAL 50V SOT563
Manufacturer
Diodes Inc
Datasheet

Specifications of DMP57D5UV-7

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 100mA, 4V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
160mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
29pF @ 25V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-563
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 4 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.16 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DMP57D5UVDITR
Ordering Information
Marking Information
Notes:
Notes:
Date Code Key
DMP57D5UV
Document number: DS31540 Rev. 3 - 2
Month
Code
Code
Year
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
0.9
0.8
0.7
0.6
0.5
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1
-50
DMP57D5UV -7
Part Number
-25
0.001
0.01
T , AMBIENT TEMPERATURE (°C)
0.1
A
0.00001
1
Jan
0
D = 0.7
D = 0.5
D = 0.3
D = 0.1
1
2008
D = 0.05
V
25
D = Single Pulse
(Note 6)
(Note 5)
Feb
D = 0.005
2
0.0001
50
D = 0.01
I = -250µA
D
2009
D = 0.02
W
75
Mar
3
100
0.001
KDP YM
Apr
125 150
4
2010
Fig. 9 Transient Thermal Response
X
t , PULSE DURATION TIME (s)
1
www.diodes.com
May
0.01
5
SOT-563
Case
3 of 5
KDP = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2011
Y
Jun
6
D = 0.9
0.1
0.5
0.4
0.3
0.2
0.1
0
0.3
P(pk)
Jul
7
2012
Duty Cycle, D = t /t
T - T = P * R
R
Z
J
R
Fig. 8 Diode Forward Voltage vs. Current
θ
JA
0.4
θ
JA
-V , SOURCE-DRAIN VOLTAGE (V)
t
(t) = r(t) * R
A
1
t
= 294°C/W
SD
2
Aug
1
8
0.5
θ
T = 85°C
JA
A
θ
1 2
(t)
JA
2013
T = 125°C
A
A
Sep
0.6
T = 150°C
9
A
10
3000/Tape & Reel
0.7
Packaging
Oct
O
2014
B
0.8
T = -55°C
DMP57D5UV
A
100
Nov
T = 25°C
N
0.9
© Diodes Incorporated
A
2015
April 2009
1
C
Dec
D

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