FDC6506P Fairchild Semiconductor, FDC6506P Datasheet - Page 4

• Manufacturer Part Number: FDC6506P
• Description: MOSFET P-CHAN DUAL 30V SSOT6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC6506P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.17Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Module Configuration: Dual
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6506PTR

Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #3 FDC637BNZ
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
HAST2
HTGB
HTRB
PRCL
TMCL1
Device #4 FDC638APZ
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
HAST2
HTGB
HTRB
PRCL
TMCL1
Device #5 FDC658AP
Package:
#Leads:
P/C
X
X
P/C
P/C
X
X
X
P/C
P/C
X
X
X
TTK23
006
TTK23
006
TTK23
006
P/C
Standard
JESD22-A113
Standard
JESD22-A113
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A110 85%RH, 110C,
JESD22-A108 150C, 12V
JESD22-A108 150C, 16V
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A110 85%RH, 110C,
JESD22-A108 150C, 8V
JESD22-A108 150C, 16V
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Conditions
Delta 100CC, 2
Min cycle
Conditions
16V
Delta 100?C, 2
Min cycle
Conditions
16V
Delta 100?C, 2
Min cycle
Conditions
Conditions
Conditions
Readpoints
TP1
5000
100
Readpoints
TP1
132
168
168
5000
100
Readpoints
TP1
132
168
168
5000
100
TP2
264
500
500
10000
500
TP2
264
500
500
10000
500
Read-
points
Read-
points
TP2
10000
500
TP3
1000
1000
TP3
1000
1000
Sample
Sample
A
A
0
0
Samples
A
77
77
77
Samples
A
77
77
77
77
77
77
Samples
A
77
77
77
77
77
77
B
B
0
0
B
77
77
77
77
77
77
B
77
77
77
77
77
77
A
0
C
C
0
0
C
77
77
77
77
77
77
C
77
77
77
77
77
77
Pg. 4