DMN5L06DMK-7 Diodes Inc, DMN5L06DMK-7 Datasheet - Page 2

• Manufacturer Part Number: DMN5L06DMK-7
• Description: MOSFET DUAL N-CHAN 50V SOT-26
• Manufacturer: Diodes Inc

Specifications of DMN5L06DMK-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 50mA @ 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 305mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-26
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 5 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.305 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMN5L06DMKDITR

DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
10
0
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
-50
-25
V , DRAIN-SOURCE VOLTAGE (V)
T , CHANNEL TEMPERATURE (°C)
Fig. 1 Typical Output Characteristics
ch
DS
I , DRAIN CURRENT (A)
0
D
25
50
75
100
125
150
1
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Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
0
1
V
Fig. 2 Typical Transfer Characteristics
GS,
V
GS
GATE SOURCE VOLTAGE (V)
I DRAIN CURRENT (A)
, GATE-SOURCE VOLTAGE (V)
D ,
DMN5L06DMK
© Diodes Incorporated
September 2007