FDMA1024NZ Fairchild Semiconductor, FDMA1024NZ Datasheet - Page 5

MOSFET N-CH DUAL 20V 6-MICROFET

FDMA1024NZ

Manufacturer Part Number
FDMA1024NZ
Description
MOSFET N-CH DUAL 20V 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1024NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
54 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
500pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.054 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
5 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1024NZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA1024NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
86 327
Part Number:
FDMA1024NZ
Manufacturer:
HONGFA
Quantity:
6 700
Part Number:
FDMA1024NZ
0
©2010 Fairchild Semiconductor Corporation
FDMA1024NZ Rev.B4
Typical Characteristics
Figure 9.
10
10
10
10
10
10
10
Figure 7.
-2
-3
-4
-5
-6
-7
-8
5
4
3
2
1
0
100
0
0
0.3
10
Gate Leakage Current vs Gate to Source
10
1
I
V
D
-3
GS
= 5 A
= 0 V
1
V
Gate Charge Characteristics
3
V
GS ,
DD
GATE TO SOURCE VOLTAGE (V)
= 8 V
Q
g
Voltage
2
, GATE CHARGE (nC)
T
6
J
V
10
= 125
DD
Figure 11.
-2
V
= 12 V
GS
3
o
= 4.5 V
C
T
J
9
= 25 °C unless otherwise noted
V
DD
T
4
J
= 25
= 10 V
Single Pulse Maximum Power Dissipation
o
12
C
10
5
-1
t, PULSE WIDTH (sec)
15
6
5
10
0
0.01
1000
0.1
100
10
Figure 10. Forward Bias Safe Operating Area
10
1
0.1
Figure 8 .
0.1
THIS AREA IS
LIMITED BY r
f = 1 MHz
V
GS
SINGLE PULSE
T
R
T
10
J
A
θ
= 0 V
JA
= MAX RATED
= 25
1
V
V
to Source Voltage
= 173
DS
DS
Capacitance vs Drain
o
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
C
DS(on)
o
SINGLE PULSE
R
T
C/W
A
θ
JA
= 25
1
= 173
o
1
C
o
100
C/W
10
www.fairchildsemi.com
100 ms
10 s
100 us
1 ms
10 ms
1 s
DC
1000
10
C
C
C
oss
rss
iss
60
20

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