FDS9945 Fairchild Semiconductor, FDS9945 Datasheet - Page 2
![MOSFET N-CH 60V 3.5A SO-8](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS9945
Manufacturer Part Number
FDS9945
Description
MOSFET N-CH 60V 3.5A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS9945.pdf
(5 pages)
Specifications of FDS9945
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 5V
Input Capacitance (ciss) @ Vds
420pF @ 30V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8.6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS9945
FDS9945TR
FDS9945TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS9945
Manufacturer:
Fairchild Semiconductor
Quantity:
63 623
Part Number:
FDS9945
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS9945-NL
Manufacturer:
FAIRCHILD
Quantity:
12 650
Part Number:
FDS9945-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
the drain pins. R
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
JA
DSS
GS(th)
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 78°/W when
mounted on a 0.5in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 125°/W when
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 25°C unless otherwise noted
= 10 V, I
mounted on a 0.02
in
copper
= 0 V, I
= 48 V,
= 20 V,
= –20 V
= V
= 10 V,
= 4.5V,
= 10 V,
= 5V,
= 30 V,
= 30 V,
= 10 V,
= 30 V,
= 0 V, I
= 5 V
2
pad of 2 oz
Test Conditions
GS
, I
D
D
D
= 250 A
S
= 250 A
=3.5A, T
= 2.1 A
V
V
V
I
I
V
I
GS
DS
D
D
D
= V
I
I
R
DS
D
D
= 3.5 A
= 2.5 A
GS
GEN
= 3.5 A,
= 3.5 A
= 1 A,
= 0 V
= 0 V
= 0 V
DS
= 0 V,
J
= 6
=125 C
=30 V
(Note 2)
Min
60
10
1
c) 135°/W when mounted on a
minimum pad.
Typ
62.5
103
126
420
2.5
8.6
4.3
2.5
0.8
–6
74
48
20
19
7
3
8
4
Max Units
–100
100
100
200
170
8.6
2.1
1.2
14
34
13
1
3
6
FDS9945 Rev B(W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A