DMN6066SSD-13 Diodes Zetex, DMN6066SSD-13 Datasheet - Page 5

• Manufacturer Part Number: DMN6066SSD-13
• Description: MOSFET 2N-CH 60V 3.3A SO8
• Manufacturer: Diodes Zetex

Specifications of DMN6066SSD-13

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 502pF @ 30V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN6066SSD-13TR

Typical Characteristics
DMN6066SSD
Document Number DS32109 Rev 1 - 2
1E-3
0.01
0.01
0.01
Typical Transfer Characteristics
100
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
0.01
1
1
1
T = 25°C
V
0.1
T = 25°C
DS
1
V
V
= 10V
T = 150°C
DS
GS
3V
Output Characteristics
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
2
10V
1
1
4.5V
3
3.5V
T = 25°C
4V
4V
10
4
10
4.5V
3.5V
www.diodes.com
10V
V
V
3V
GS
GS
5
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
0.4
Output Characteristics
Diodes Incorporated
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
A Product Line of
V
I
V
I
D
D
0.6
GS
GS
= 250uA
= 12A
1
= V
= 10V
50
DS
10V
0.8
Vgs = 0V
100
T = 25°C
DMN6066SSD
10
R
DS(on)
4.5V
1.0
V
3.5V
4V
2.5V
GS(th)
3V
2V
© Diodes Incorporated
V
GS
150
March 2010