FDS4953 Fairchild Semiconductor, FDS4953 Datasheet
FDS4953
Manufacturer Part Number
FDS4953
Description
MOSFET P-CH DUAL 30V 5A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4953.pdf
(5 pages)
Specifications of FDS4953
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 5V
Input Capacitance (ciss) @ Vds
528pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.055 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
-5A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
46mohm
Rds(on) Test Voltage Vgs
-10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4953
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FDS4953A
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FDS4953
Dual 30V P-Channel PowerTrench MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
D
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
FDS4953
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
D
D2
SO-8
D
D1
– Continuous
– Pulsed
D
FDS4953
Device
D1
Parameter
S2
S
G2
S
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
–5 A, –30 V
Low gate charge (6nC typical)
Fast switching speed
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
–55 to +175
Q1
Q2
12mm
R
R
Ratings
DS(ON)
DS(ON)
–30
–20
1.6
0.9
–5
78
40
20
2
1
= 55 m @ V
= 95 m @ V
4
3
2
1
May 2002
GS
GS
FDS4953 Rev D1(W)
2500 units
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
W
V
V
A
C
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FDS4953 Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ May 2002 –10 V DS(ON –4.5 V DS(ON Ratings Units – –5 A – 0.9 –55 to +175 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS4953 Rev D1(W) ...
Page 2
... CA b) 125°C/W when mounted pad copper Min Typ Max Units –30 V –23 mV/ C –1 –100 nA 100 nA –1 –1.7 –3 V 4.5 mV – 528 pF 132 2 –1.3 A –0.8 –1.2 V (Note 2) c) 135°C/W when mounted on a minimum pad. FDS4953 Rev D1(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.0V GS -4.0V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4953 Rev D1( 1.4 ...
Page 4
... Figure 8. Capacitance Characteristics. 50 100 s 1ms 40 10ms 0.001 0.01 10 100 Figure 10. Single Pulse Maximum 0.01 0 MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 FDS4953 Rev D1(W) 30 1000 ...
Page 5
CROSSVOLT â â â â Rev. H5 ...