SI5509DC-T1-E3 Vishay, SI5509DC-T1-E3 Datasheet

MOSFET N/P-CH 20V CHIPFET 1206-8

SI5509DC-T1-E3

Manufacturer Part Number
SI5509DC-T1-E3
Description
MOSFET N/P-CH 20V CHIPFET 1206-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI5509DC-T1-E3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5A, 3.9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6.6nC @ 5V
Input Capacitance (ciss) @ Vds
455pF @ 10V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Transistor Polarity
N And P Channel
Continuous Drain Current Id
5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
43mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.052 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5 A, - 3.9 A
Power Dissipation
2.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5509DC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI5509DC-T1-E3
Quantity:
70 000
Ordering Information:
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W for both channels.
Document Number: 73629
S10-0547-Rev. B, 08-Mar-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
P-Channel
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
1206-8 ChipFET
D
1
C
V
D
= 25 °C.
DS
- 20
1
20
Bottom View
D
(V)
S
2
Si5509DC -T1-E3
Si5509DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
D
G
0.090 at V
0.160 at V
2
0.052 at V
0.084 at V
1
S
2
®
R
1
J
DS(on)
G
N- and P-Channel 20 V (D-S) MOSFET
= 150 °C)
2
b, f
GS
GS
GS
GS
(Lead (Pb)-free)
= - 4.5 V
= - 2.5 V
(Ω)
= 4.5 V
= 2.5 V
I
D
- 4.8
- 3.6
Marking Code
6.1
4.8
(A)
ED
d, e
a
a
a
a
a
A
= 25 °C, unless otherwise noted
XXX
Part # Code
Q
Steady State
3.9 nC
3.8 nC
T
T
T
T
T
g
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Complementary MOSFET for Portable Devices
Symbol
Symbol
T
R
R
J
V
V
I
Definition
- Ideal for Buck-Boost Circuits
P
, T
I
DM
thJA
I
thJF
DS
GS
D
S
D
stg
G
1
N-Channel MOSFET
Typ.
®
50
30
N-Channel
N-Channel
Power MOSFETs
1.33
5.0
3.9
1.7
2.1
2.88
6.1
4.9
3.7
4.5
20
10
b, c
b, c
b, c
b, c
D
S
b, c
a
a
1
1
Max.
60
40
- 55 to 150
± 12
260
Typ.
50
30
P-Channel
P-Channel
- 3.9
- 3.1
- 1.7
1.33
2.1
- 4.8
- 3.8
- 3.7
2.88
G
- 20
- 15
Vishay Siliconix
4.5
2
b, c
b, c
b, c
b, c
b, c
a
a
P-Channel MOSFET
Max.
60
40
Si5509DC
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
°C
W
V
A
1

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SI5509DC-T1-E3 Summary of contents

Page 1

... Bottom View Si5509DC -T1-E3 Ordering Information: (Lead (Pb)-free) Si5509DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5509DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... DD L ≅ GEN ° 2 1 N-Channel 2.4 A, dI/dt = 100 A/µ P-Channel 1.5 A, dI/ 100 A/µ Si5509DC Vishay Siliconix a Min. Typ. Max N-Ch 95 143 = 1 Ω P-Ch 75 113 N- P- Ω N-Ch 3.75 P-Ch - 3.75 N- N-Ch 0.8 1.2 P- ...

Page 4

... Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 2.5 V 0.10 GS 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge g Gate Charge www.vishay.com 2 1.5 V 2 °C ...

Page 5

... Limited DS(on 0 °C 0.01 A Single Pulse BVDSS Limited 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5509DC Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power ...

Page 6

... Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 73629 S10-0547-Rev. B, 08-Mar- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5509DC Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( thJA 4 ...

Page 8

... Si5509DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.6 1.2 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 3 Total Gate Charge g Gate Charge www.vishay.com 2 1 2.4 3.0 600 ...

Page 9

... Limited DS(on 0.1 BVDSS Limited °C A Single Pulse 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Case Si5509DC Vishay Siliconix 0.3 0 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 10

... Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73629. Document Number: 73629 S10-0547-Rev. B, 08-Mar- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5509DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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