ZXMC10A816N8TC Diodes Inc, ZXMC10A816N8TC Datasheet - Page 5

• Manufacturer Part Number: ZXMC10A816N8TC
• Description: MOSFET DUAL COMPL 100V 8-SOIC
• Manufacturer: Diodes Inc

Specifications of ZXMC10A816N8TC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 497pF @ 50V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC10A816N8DITR

Q1 (N-channel) typical characteristics
Issue 1.3 - March 2009
© Diodes Incorporated 2009
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
10
10
On-Resistance v Drain Current
0.01
1
1
1
2.0
T = 25° C
0.1
V
3V
V
DS
2.5
GS
Output Characteristics
T = 150° C
I
Drain-Source Voltage (V)
D
Gate-Source Voltage (V)
V
0.1
GS
Drain Current (A)
3.0
10V
1
3.5V
3.5
1
T = 25° C
5V
V
DS
4.0
4V
T = 25° C
= 10V
10
4.5V
10
4.5V
3.5V
4.5
10V
5V
4V
V
3V
GS
5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
0.1
10
1
-50
0.2
1
T = 150° C
0.1
Tj Junction Temperature (° C)
V
V
DS
SD
Output Characteristics
0.4
Drain-Source Voltage (V)
Source-Drain Voltage (V)
T = 150° C
0
0.6
ZXMC10A816N8
1
50
V
I
D
10V
GS
= 250uA
= V
0.8
www.diodes.com
DS
T = 25° C
V
I
D
GS
= 1.6A
100
= 10V
10
1.0
5V
R
4.5V
2.5V
V
3.5V
4V
3V
V
DS(on)
GS(th)
GS
150
1.2