SI6954ADQ-T1-GE3 Vishay, SI6954ADQ-T1-GE3 Datasheet

BATTERY SW N-CH 30V 3.4A 8-TSSOP

SI6954ADQ-T1-GE3

Manufacturer Part Number
SI6954ADQ-T1-GE3
Description
BATTERY SW N-CH 30V 3.4A 8-TSSOP
Manufacturer
Vishay
Datasheet

Specifications of SI6954ADQ-T1-GE3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
53 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
N Channel
Continuous Drain Current Id
3.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6954ADQ-T1-GE3TR
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71130
S-81221-Rev. C, 02-Jun-08
Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
G
D
S
S
1
1
1
1
1
2
3
4
0.075 at V
0.053 at V
R
DS(on)
J
a
TSSOP-8
N-Channel 2.5-V (G-S) Battery Switch
Top View
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
a
8
7
6
5
a
D
S
S
G
2
2
2
2
A
I
= 25 °C, unless otherwise noted
D
3.4
2.9
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free
Symbol
Symbol
T
R
R
TrenchFET
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
G
stg
1
N-Channel MOSFET
®
Power MOSFETs: 2.5 V Rated
D
S
Typical
1
1
10 s
0.83
0.96
126
3.4
2.7
1.0
90
65
- 55 to 150
± 20
30
20
Steady State
G
Maximum
2
0.69
0.83
0.53
125
150
3.1
2.5
80
N-Channel MOSFET
Vishay Siliconix
Si6954ADQ
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6954ADQ-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6954ADQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71130 S-81221-Rev. C, 02-Jun- 4 °C J 0.8 1.0 1.2 1.4 Si6954ADQ Vishay Siliconix 600 500 C iss 400 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance 1 3 1.6 1.4 1 ...

Page 4

... Si6954ADQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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