ZXMN3F31DN8TA Diodes Zetex, ZXMN3F31DN8TA Datasheet

MOSFET N-CHAN 30V 8SOIC DUAL

ZXMN3F31DN8TA

Manufacturer Part Number
ZXMN3F31DN8TA
Description
MOSFET N-CHAN 30V 8SOIC DUAL
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN3F31DN8TA

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12.9nC @ 10V
Input Capacitance (ciss) @ Vds
608pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN3F31DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3F31DN8TA
Manufacturer:
D1ODES
Quantity:
20 000
ZXMN3F31DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
Applications
Ordering information
Device marking
ZXMN
3F31D
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
DEVICE
ZXMN3F31DN8TA
V
Low on-resistance
4.5V gate drive capability
DC-DC Converters
Power management functions
Load switching
Motor control
Back lighting
(BR)DSS
30
0.039 @ V
0.024 @ V
R
DS(on)
GS
GS
Reel size
(inches)
(Ω)
= 4.5V
= 10V
7
Tape width
I
D
7.3
5.7
(mm)
(A)
12
1
Quantity
per reel
500
G1
S1
D1
G2
G1
S2
S1
G2
www.zetex.com
D2
S2
D1
D1
D2
D2

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ZXMN3F31DN8TA Summary of contents

Page 1

... DC-DC Converters • Power management functions • Load switching • Motor control • Back lighting Ordering information DEVICE Reel size (inches) ZXMN3F31DN8TA Device marking ZXMN 3F31D Issue 2 - February 2008 © Zetex Semiconductors plc 2008 I (A) D 7.3 5.7 Tape width Quantity (mm) ...

Page 2

Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C A Linear ...

Page 3

Thermal characteristics Issue 2 - February 2008 © Zetex Semiconductors plc 2008 ZXMN3F31DN8 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-Source breakdown voltage Zero Gate voltage drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (*) on-state resistance Forward (*)(†) transconductance (†) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (‡)(†) Switching Turn-on-delay time ...

Page 5

Typical characteristics Issue 2 - February 2008 © Zetex Semiconductors plc 2008 ZXMN3F31DN8 5 www.zetex.com ...

Page 6

Typical characteristics Test circuits Issue 2 - February 2008 © Zetex Semiconductors plc 2008 ZXMN3F31DN8 6 www.zetex.com ...

Page 7

Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 2 ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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