FDMS9620S Fairchild Semiconductor, FDMS9620S Datasheet - Page 7

• Manufacturer Part Number: FDMS9620S
• Description: MOSFET N-CHAN DUAL 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS9620S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0215 Ohm @ 10 V @ Q1
• Forward Transconductance Gfs (max / Min): 28 S / 27 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A @ Q1 or 10 A @ Q2
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS9620STR

©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
Typical Characteristics
10
8
6
4
2
0
Figure 18. Gate Charge Characteristics
0
I
D
= 10A
4
Q
g
,
GATE CHARGE(nC)
8
V
DD
=10V
12
V
DD
= 20V
V
16
DD
= 15V
20
7
2000
1000
100
50
0.1
Figure 19. Capacitance vs Drain
f = 1MHz
V
GS
= 0V
V
to Source Voltage
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
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C
C
C
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iss
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