FDS6990AS Fairchild Semiconductor, FDS6990AS Datasheet
FDS6990AS
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FDS6990ASTR
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FDS6990AS Summary of contents
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... FDS6990AS ©2010 Fairchild Semiconductor Corporation FDS6990AS Rev. A2 ® SyncFET™ General Description = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET GS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup- GS plies. This 30V MOSFET is designed to maximize power con- version efficiency, providing a low R Each MOSFET includes integrated Schottky diodes using Fair- child’ ...
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... Gate–Drain Charge gd Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current S V Drain–Source Diode Forward SD Voltage t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FDS6990AS Rev 25°C unless otherwise noted A Test Conditions mA, Referenced to 25 ° ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4 FDS6990AS Rev 125°C/W when 2 mounted on a 0.02 in pad copper 3 c) 135°C/W when mounted on a minimum pad. ...
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... T , JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature 125 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS6990AS Rev 1.8 3.0V 1.6 1.4 1.2 2.5V 1 0.8 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 0.06 0.05 0.04 0.03 0. 0.01 ...
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... SINGLE PULSE 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6990AS Rev. A2 1000 20V 15V 100 20 0 Figure 8. Capacitance Characteristics. ...
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... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990AS. 12.5nS/Div Figure 12. FDS6990AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A) ...
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... g(REF) Figure 17. Gate Charge Test Circuit GEN V GS Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 19. Switching Time Test Circuit FDS6990AS Rev. A2 (continued DUT V DD – 0.01Ω Figure 16. Unclamped Inductive + V DD – 10V DUT V GS Figure 18. Gate Charge Waveform ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS6990AS Rev. A2 ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...