NDS8936 Fairchild Semiconductor, NDS8936 Datasheet

MOSFET 2N-CH 30V 5.3A 8-SOIC

NDS8936

Manufacturer Part Number
NDS8936
Description
MOSFET 2N-CH 30V 5.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of NDS8936

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
720pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.035Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
5.3A
Power Dissipation
2W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS8936TR

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________________________________________________________________________________
Absolute Maximum Ratings
© 1997 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
NDS8936
Dual N-Channel Enhancement Mode Field Effect Transistor
DSS
GSS
D
J
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
(Note 1a)
Features
5.3A, 30V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
R
DS(ON)
DS(ON)
6
5
8
7
NDS8936
-55 to 150
= 0.035
= 0.05
± 5.3
± 20
± 20
1.6
0.9
30
78
40
2
1
@ V
@ V
GS
GS
= 4.5V.
= 10V
DS(ON)
1
4
3
2
.
June 1997
NDS8936 Rev. G
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for NDS8936

NDS8936 Summary of contents

Page 1

... Dual MOSFET in surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) June 1997 = 0.035 @ V = 10V DS(ON 0. 4.5V. DS(ON DS(ON NDS8936 30 ± 20 ± 5.3 ± 1.6 1 0.9 -55 to 150 78 40 NDS8936 Rev. G Units °C °C/W °C/W ...

Page 2

... 5 125° 4 4 125° 4 5 1.0 MHz GEN GEN 5 Min Typ Max Units µA 10 µA 100 nA -100 nA 1 1.6 2.8 V 0.7 1.2 2.2 0.033 0.035 0.046 0.063 0.046 0.05 0.064 0. 10.5 S 720 pF 370 pF 250 2.2 nC 5.5 nC NDS8936 Rev. G ...

Page 3

... C/W when mounted on a 0.003 in 2 pad of 2oz copper. 1a Scale letter size paper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions 5.3 A (Note 1. /dt = 100 A/µ Min Typ Max Units 1.2 0.9 1.3 100 ns is guaranteed NDS8936 Rev ...

Page 4

... Figure 6. Gate Threshold Variation with V = 3.0V GS 3.5 4.0 4 DRAIN CURRENT (A) D Voltage and Drain Current. = 10V 125° DRAIN CURRENT (A) D Current and Temperature 250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. 5.0 6 25°C -55° 125 150 NDS8936 Rev. G ...

Page 5

... Figure 8. Body Diode Forward Voltage Variation 5. iss 6 C oss rss Figure 10. Gate Charge Characteristics -55°C J 25°C 125° =0V 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Current and Temperature . 10V 20V GATE CHARGE (nC) g 1.4 25 NDS8936 Rev. G ...

Page 6

... FR-4 Board Still Air Figure 13. Maximum Steady- State Drain Current versus Copper Mounting Pad Area TIME (sec) 1 4.5"x5" FR-4 Board Still Air 0.1 0.2 0.3 0.4 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1c JA P(pk ( Duty Cycle 0.5 NDS8936 Rev. G ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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