SI4816BDY-T1-GE3 Vishay, SI4816BDY-T1-GE3 Datasheet - Page 5
![MOSFET DL N-CH 30V 6.8A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4816BDY-T1-GE3
Manufacturer Part Number
SI4816BDY-T1-GE3
Description
MOSFET DL N-CH 30V 6.8A 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4816BDY-T1-GE3.pdf
(10 pages)
Specifications of SI4816BDY-T1-GE3
Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.5 mOhm @ 6.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Power - Max
1W, 1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.0185 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.8 A @ Channel 1 or 8.2 A @ Channel 2
Power Dissipation
1000 mW @ Channel 1 or 1250 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
30V
Threshold Voltage Vgs Typ
3V
Power Dissipation Pd
1.25W
Operating Temperature Range
-55°C To +150°C
No. Of Pins
8
Termination Type
SMD
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4816BDY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4816BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
15 000
Company:
Part Number:
SI4816BDY-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
26 136
Part Number:
SI4816BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
4
Single Pulse
Single Pulse
10 -
3
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
100
0.1
10
10 -
1
0.1
2
Limited by R
* V
Limited
I
GS
D(on)
Single Pulse
T
>
C
V
= 25 °C
minimum V
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
DS
10 -
DS(on)
Safe Operating Area
2
–
10 -
1
Drain-to-Source Voltage (V)
*
1
GS
BVDSS Limited
at which R
DS(on)
10
10 -
1
I
is specified
1
DM
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
1
A
1
= P
t
Vishay Siliconix
2
DM
Si4816BDY
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
www.vishay.com
600
10
5