SI4963BDY-T1-E3 Vishay, SI4963BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4963BDY-T1-E3
• Description: MOSFET P-CH DUAL 20V 4.9A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4963BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.032 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4963BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 72753
S09-0704-Rev. B, 27-Apr-09
0.10
0.08
0.06
0.04
0.02
0.00
40
10
1
5
4
3
2
1
0
0.0
0
0
V
GS
V
I
D
Source-Drain Diode Forward Voltage
DS
2
= 2.5 V
= 6.5 A
On-Resistance vs. Drain Current
= 10 V
0.3
8
V
SD
T
4
Q
J
g
= 150 °C
– Source-to-Drain Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
16
0.6
6
V
GS
8
= 4.5 V
24
0.9
10
T
J
= 25 °C
12
32
1.2
14
40
1.5
16
2000
1600
1200
0.10
0.08
0.06
0.04
0.02
0.00
1.6
1.4
1.2
1.0
0.8
0.6
800
400
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
- 25
GS
rss
= 6.5 A
= 4.5 V
I
D
1
4
= 2 A
T
V
0
V
J
C
GS
DS
– Junction Temperature (°C)
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
Capacitance
2
8
50
Vishay Siliconix
Si4963BDY
I
3
12
D
75
= 6.5 A
C
iss
100
www.vishay.com
16
4
125
150
5
20
3