SI7922DN-T1-GE3 Vishay, SI7922DN-T1-GE3 Datasheet - Page 2
![MOSFET DL N-CH 100V PPAK 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7922DN-T1-GE3
Manufacturer Part Number
SI7922DN-T1-GE3
Description
MOSFET DL N-CH 100V PPAK 1212-8
Manufacturer
Vishay
Datasheet
1.SI7922DN-T1-GE3.pdf
(6 pages)
Specifications of SI7922DN-T1-GE3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
195 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7922DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7922DN-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
30 260
Si7922DN
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
b
10
8
6
4
2
0
0
1
a
a
V
Output Characteristics
DS
2
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
3
V
GS
a
3 V
= 10 thru 6 V
4
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
5
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
5 V
rr
fs
gs
gd
r
f
4 V
g
g
A
= 25 °C, unless otherwise noted
6
V
V
I
7
DS
DS
D
≅ 1 A, V
I
= 100 V, V
F
= 50 V, V
V
V
V
V
V
= 2.2 A, dI/dt = 100 A/µs
V
V
DS
I
DS
DS
V
S
8
DD
DS
GS
DS
GS
Test Conditions
= 2.2 A, V
= 0 V, V
= V
= 100 V, V
≥ 5 V, V
= 50 V, R
= 10 V, I
= 10 V, I
= 6 V, I
GEN
GS
GS
GS
, I
= 4.5 V, R
= 10 V, I
GS
D
= 0 V, T
GS
D
D
D
GS
= 250 µA
L
= 2.3 A
GS
= ± 20 V
= 2.5 A
= 2.5 A
= 10 V
= 50 Ω
= 0 V
= 0 V
D
J
G
= 85 °C
= 2.5 A
= 6 Ω
10
8
6
4
2
0
0
1
Min.
2.5
10
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
2
0.162
0.190
Typ.
5.3
0.8
5.2
1.1
1.9
1.7
11
11
40
T
7
8
C
25 °C
= 125 °C
3
S-81544-Rev. E, 07-Jul-08
Document Number: 72031
± 100
0.195
0.230
Max.
3.5
1.2
4
15
20
15
20
80
1
5
8
- 55 °C
5
Unit
nC
nA
µA
ns
Ω
Ω
V
A
S
V
6