... Top View Ordering Information: Si4931DY -T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
... Si4931DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
... V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72379 S09-0704-Rev. C, 27-Apr °C J 0.8 1.0 1.2 1.4 Si4931DY Vishay Siliconix 5000 4000 C iss 3000 2000 C oss 1000 C rss – Drain-to-Source Voltage (V) DS Capacitance ...
... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72379. Document Number: 72379 S09-0704-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4931DY Vishay Siliconix www.vishay.com 10 5 ...
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