SI7220DN-T1-E3 Vishay, SI7220DN-T1-E3 Datasheet

MOSFET DUAL N-CH 60V 1212-8

SI7220DN-T1-E3

Manufacturer Part Number
SI7220DN-T1-E3
Description
MOSFET DUAL N-CH 60V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7220DN-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.4 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.8A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7220DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7220DN-T1-E3
Manufacturer:
AD
Quantity:
1 944
Part Number:
SI7220DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7220DN-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73117
S-83052-Rev. C, 29-Dec-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
Ordering Information: Si7220DN-T1-E3 (Lead (Pb)-free)
DS
60
(V)
8
0.075 at V
0.060 at V
D1
3.30 mm
7
R
D1
DS(on)
Si7220DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
PowerPAK 1212-8
GS
D2
GS
5
(Ω)
= 4.5 V
= 10 V
J
a
D2
= 150 °C)
a
Dual N-Channel 60-V (D-S) MOSFET
1
Bottom View
S1
a
2
G1
I
D
4.8
4.3
3
(A)
S2
a
3.30 mm
4
b, c
G2
A
Q
= 25 °C, unless otherwise noted
Steady State
Steady State
g
L = 0 1 mH
T
T
T
T
(Typ.)
13
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
G
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Synchronous Rectification
• Primary Side Switch
1
Symbol
Symbol
T
R
R
J
Available
Package,
Thermally Comparable
V
V
E
I
I
N-Channel MOSFET
P
, T
I
DM
thJA
thJC
AS
I
DS
GS
AS
D
S
D
stg
D
S
1
1
1
®
/
3
Power MOSFET
Typical
the Space of An SO-8 While
10 s
4.8
3.8
2.2
2.6
1.4
4.3
38
77
G
2
- 55 to 150
N-Channel MOSFET
± 20
260
6.1
60
20
11
Steady State
Maximum
D
S
2
2
0.69
3.4
2.7
1.1
1.3
5.4
48
94
Vishay Siliconix
Si7220DN
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI7220DN-T1-E3 Summary of contents

Page 1

... PowerPAK 1212 Bottom View Ordering Information: Si7220DN-T1-E3 (Lead (Pb)-free) Si7220DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) ...

Page 2

... Si7220DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73117 S-83052-Rev. C, 29-Dec- °C J 0.8 1.0 1.2 1.4 Si7220DN Vishay Siliconix 1000 800 C iss 600 400 200 C rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 4.8 A 1.8 D 1.6 1.4 1 ...

Page 4

... Si7220DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µA 75 100 125 150 100 * Limited by R DS(on) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73117. Document Number: 73117 S-83052-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7220DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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