IRF7105TRPBF International Rectifier, IRF7105TRPBF Datasheet - Page 8
IRF7105TRPBF
Manufacturer Part Number
IRF7105TRPBF
Description
MOSFET N+P 25V 2.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF7105TRPBF.pdf
(10 pages)
Specifications of IRF7105TRPBF
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
3.5A, 2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
25V
Gate-source Voltage (max)
±20V
Power Dissipation
2W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
160 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.5 A
Mounting Style
SMD/SMT
Gate Charge Qg
9.4 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7105PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7105TRPBF
Manufacturer:
International Rectifier
Quantity:
37 280
Part Number:
IRF7105TRPBF
Manufacturer:
IR
Quantity:
20 000
8
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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