IRF7306QTRPBF International Rectifier, IRF7306QTRPBF Datasheet

MOSFET P-CH DUAL 30V 8-SOIC

IRF7306QTRPBF

Manufacturer Part Number
IRF7306QTRPBF
Description
MOSFET P-CH DUAL 30V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF7306QTRPBF.pdf (9 pages)
2.IRF7306TR.pdf (9 pages)

Specifications of IRF7306QTRPBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-3.6A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7306QTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7306QTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
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These HEXFET
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
θ
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
®
Power MOSFET's in a Dual

‚
„
G2
G1
S2
S1
1
2
3
4
Top View
8
6
5
7
D1
D1
D2
D2
SO-8
®
DS(on)
DSS
Ω
1

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IRF7306QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l ® These HEXFET Power MOSFET Dual SO-8 package utilize the ...

Page 2

  ‚ ≤ ≤ ≤ ≤ www.irf.com J Ω ƒ ≤ „ ƒ ƒ ƒ Ω Ω, ƒ ƒ ƒ ≤ ≤ 2 ...

Page 3

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T ...

Page 4

1MHz iss rss 800 oss ds gd 600 C iss C oss 400 C rss ...

Page 5

T , Case Temperature ( C) C 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com V DS 90% 125 150 ...

Page 6

Charge www.irf.com Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. -3mA Current Sampling Resistors - ...

Page 7

Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current di/dt ...

Page 8

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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