IRF7756TRPBF International Rectifier, IRF7756TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7756TRPBF
• Description: MOSFET P-CH DUAL 12V 4.3A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7756TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7756TRPBF; IRF7756TRPBFTR

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Fig 14. Threshold Voltage Vs. Tempera-
0.7
0.6
0.5
0.4
0.3
0.2
-75
-50
-25
T J , Temperature ( °C )
0
ture
25
50
I D = -250µA
75
100 125 150
80
60
40
20
0
0.001
0.010
Typical Power Vs. Time
0.100
IRF7756PbF
Time (sec)
1.000
10.000
100.000
7