STS4DPF30L STMicroelectronics, STS4DPF30L Datasheet - Page 4

• Manufacturer Part Number: STS4DPF30L
• Description: MOSFET 2P-CH 30V 4A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS4DPF30L

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.07ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3228-2

STS4DPF30L
Fig. 1: Switching Times Test Circuits For Resistive
Fig. 2: Gate Charge test Circuit
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
4/6