IRF7325TRPBF International Rectifier, IRF7325TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7325TRPBF
• Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7325TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2020pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 7.8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7325PBFTR; IRF7325TRPBF; IRF7325TRPBFTR

Source-Drain Ratings and Characteristics
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IRF7325PbF
Notes:
‚
Electrical Characteristics @ T
V
I
I
V
t
Q
V
∆V
g
Q
Q
Q
t
t
t
t
C
C
C
R
SM
I
S
rr
I
d(on)
r
d(off)
f
DSS
GSS
fs
SD
2
GS(th)
(BR)DSS
rr
iss
oss
rss
DS(on)
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
(BR)DSS
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
-0.40 ––– -0.90
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2020 –––
–––
–––
-12
––– 0.007 –––
–––
17
ƒ
–––
When mounted on 1 inch square copper board.
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
240
180
520
330
5.0
4.7
9.4
9.8
36
28
22
-2.0
-1.2
-1.0
–––
–––
100
–––
–––
–––
–––
–––
–––
-25
-39
7.5
7.0
54
42
24
33
49
33
V/°C
mΩ
nC
µA
nC
ns
pF
ns
nA
V
V
V
S
A
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
D
GS
GS
DS
= -7.8A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -6.0V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -8.0V
= 8.0V
= -4.5V
= -6.0V
= -4.5V ‚
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -2.0A
= -2.0A, V
D
D
D
= -250µA
GS
GS
= -7.8A
= -7.8A ‚
= -6.2A ‚
= -3.9A ‚
‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 0V
= 70°C
‚
D
S