IRF7506TR International Rectifier, IRF7506TR Datasheet - Page 2

• Manufacturer Part Number: IRF7506TR
• Description: MOSFET 2P-CH 30V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7506TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7506
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
d(on)
r
d(off)
f
S
rr
I
DSS
V
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
g
gs
gd
rr
DS(on)
(BR)DSS
Surface mounted on FR-4 board, t
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width
/ T
-1.2A, di/dt
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs – duty cycle
-140A/µs, V
Parameter
Parameter
DD
2%
V
(BR)DSS
10sec.
J
= 25°C (unless otherwise specified)
, T
J
150°C
Min. Typ. Max. Units
Min. Typ. Max. Units
0.92
––– -0.039 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
–––
––– 0.27
––– 0.45
–––
–––
–––
–––
––– -100
–––
180
–––
–––
–––
1.3
2.5
9.7
7.5
9.3
87
42
12
19
30
37
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
-1.2
3.7
-25
1.9
-1.25
-9.6
11
45
55
V/°C
µA
nA
nC
nC
ns
pF
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
V
V
V
V
V
I
R
R
V
T
T
di/dt = -100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -1.2A
= -1.2A
= 25°C, I
= 25°C, I
= 6.2
= 12
= -10V, I
= -24V, V
= -24V, V
= -24V
= -25V
= V
= -15V
= 0V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V, See Fig. 6 and 9
GS
Conditions
, I
See Fig. 10
D
S
F
D
Conditions
= -250µA
D
D
= -1.2A, V
= -1.2A
D
GS
GS
= -250µA
= -1.2A
= -0.60A
= -0.60A
= 0V
= 0V, T
D
= -1mA
GS
J
G
= 125°C
= 0V
S
D