MCH6626-TL-E SANYO, MCH6626-TL-E Datasheet - Page 2

• Manufacturer Part Number: MCH6626-TL-E
• Description: MOSFET N/P-CH 20V 1.6/1A MCPH6
• Manufacturer: SANYO

Specifications of MCH6626-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 800mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.6A, 1A
• Gate Charge (qg) @ Vgs: 1.4nC @ 4V
• Input Capacitance (ciss) @ Vds: 105pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MCPH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1180-2

Continued from preceding page.
Electrical Connection
Switching Time Test Circuit
[N-channel]
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
4V
0V
PW=10 s
D.C. 1%
6
1
V IN
Parameter
5
2
V IN
50
G
4
3
Top view
V DD =10V
D
S
I D =800mA
R L =12.5
MCH6626
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
V OUT
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
t d (on)
t d (off)
t d (on)
t d (off)
Coss
I DSS
I GSS
Coss
Crss
V SD
Crss
V SD
Ciss
Qgs
Qgd
Ciss
Qgs
Qgd
Qg
Qg
yfs
t r
t f
t r
t f
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4V, I D =1.6A
V DS =10V, V GS =4V, I D =1.6A
V DS =10V, V GS =4V, I D =1.6A
I S =1.6A, V GS =0
I D =- -1mA, V GS =0
V DS =- -20V, V GS =0
V GS = 8V, V DS =0
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =--500mA
I D =- -500mA, V GS =--4V
I D =- -300mA, V GS =--2.5V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =- -10V, V GS =--4V, I D =--1A
V DS =- -10V, V GS =--4V, I D =--1A
V DS =- -10V, V GS =--4V, I D =--1A
I S =--1A, V GS =0
MCH6626
[P-channel]
P.G
--4V
0V
Conditions
PW=10 s
D.C. 1%
V IN
V IN
G
50
V DD = --10V
D
S
I D = --500mA
R L =20
min
MCH6626
--0.4
--20
0.7
V OUT
Ratings
typ
0.92
--0.9
105
380
540
115
1.4
0.3
0.3
1.2
1.5
0.4
0.3
23
15
16
19
23
15
15
6
8
8
6
7
max
--1.3
--1.5
500
760
1.2
10
--1
No.7918-2/6
Unit
m
m
nC
nC
nC
nC
nC
nC
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
S
V
A
A