CPH6615-TL-E SANYO, CPH6615-TL-E Datasheet - Page 2

MOSFET N/P-CH 30V 2.5/1.8A CPH6

CPH6615-TL-E

Manufacturer Part Number
CPH6615-TL-E
Description
MOSFET N/P-CH 30V 2.5/1.8A CPH6
Manufacturer
SANYO
Datasheet

Specifications of CPH6615-TL-E

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Gate Charge (qg) @ Vgs
5.2nC @ 10V
Input Capacitance (ciss) @ Vds
187pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-CPH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Other names
869-1145-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPH6615-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Continued from preceding page.
Package Dimensions
unit : mm
2238
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
1
6
2
2.9
5
0.95
Parameter
3
4
0.4
0.15
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
0.05
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
t d (on)
t d (off)
t d (on)
t d (off)
I DSS
I GSS
Coss
V SD
Ciss
Crss
V SD
Qgs
Qgd
Qgs
Qgd
Qg
yfs
Qg
t r
t f
t r
t f
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =2.5A
V DS =10V, V GS =10V, I D =2.5A
V DS =10V, V GS =10V, I D =2.5A
I S =2.5A, V GS =0
I D =--1mA, V GS =0
V DS =--30V, V GS =0
V GS = 16V, V DS =0
V DS =--10V, I D =- -1mA
V DS =--10V, I D =- -1A
I D =--1A, V GS =--10V
I D =--0.5A, V GS =- -4V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--10V, V GS =- -10V, I D =--1.8A
V DS =--10V, V GS =- -10V, I D =--1.8A
V DS =--10V, V GS =- -10V, I D =--1.8A
I S =--1.8A, V GS =0
CPH6615
Conditions
Electrical Connection
6
1
5
2
4
3
min
--1.2
--30
1.1
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
Top view
Ratings
typ
--0.91
18.5
0.97
10.5
0.97
180
320
226
7.8
5.2
0.9
1.8
8.5
5.5
22
12
43
36
29
22
1
1
max
--2.6
--1.5
235
450
1.2
10
--1
No.8069-2/6
Unit
m
m
nC
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
S
V
A
A

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