FDMA1027PT Fairchild Semiconductor, FDMA1027PT Datasheet - Page 5

• Manufacturer Part Number: FDMA1027PT
• Description: MOSFET P-CH 20V DUAL MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1027PT

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1027PTTR

©2009 Fairchild Semiconductor Corporation
FDMA1027PT Rev.B4
Typical Characteristics
0.01
100
0.1
10
Figure 7.
1
0.01
5
4
3
2
1
0
0.1
0.1
0
1
2
10
THIS AREA IS
LIMITED BY r
I
Figure 9. Forward Bias Safe
D
SINGLE PULSE
T
R
T
-4
J
A
= -3 A
JA
= MAX RATED
= 25
= 173
-V
o
1
Gate Charge Characteristics
C
DS
DUTY CYCLE-DESCENDING ORDER
D = 0.5
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
o
C/W
DS(on)
0.2
0.1
0.05
0.02
0.01
Figure 11.
Q
1
g
10
, GATE CHARGE (nC)
V
DD
2
-3
= -5 V
T
V
Junction-to-Ambient Transient Thermal Response Curve
DD
J
3
= 25 °C unless otherwise noted
= -15 V
10
10
V
DD
-2
SINGLE PULSE
R
= -10 V
100 us
1 ms
10 ms
10 s
100 ms
1 s
4
DC
JA
= 173
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
100
5
10
-1
5
1000
100
0.2
700
600
500
400
300
200
100
10
1
1
10
0
Figure 10.
0
-4
C
Figure 8.
rss
10
-3
-V
4
Power Dissipation
DS
NOTES:
DUTY FACTOR: D = t
PEAK T
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
10
t, PULSE WIDTH (sec)
Single Pulse Maximum
C
C
Capacitance vs Drain
10
oss
iss
-2
J
= P
10
8
DM
-1
x Z
P
JA
DM
1
1
/t
x R
12
2
100
SINGLE PULSE
R
T
f = 1 MHz
V
A
GS
JA
JA
t
= 25
1
10
+ T
= 0 V
= 173
V
t
2
GS
A
o
C
16
= -10 V
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o
100
C/W
1000
1000
20