SI3590DV-T1-E3 Vishay, SI3590DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3590DV-T1-E3
• Description: MOSFET N/P-CH 30V 2.5/1.7A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3590DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.077 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.5 A @ N Channel or 1.7 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rds(on) Test Voltage Vgs: 12V
• Power Dissipation Pd: 1.15W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Termination Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3590DV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 2 A
On-Resistance vs. Drain Current
= 15 V
1
V
1
2
V
DS
GS
V
Output Characteristics
Q
GS
- Drain-to-Source Voltage (V)
= 5 V thru 2.5 V
g
I
D
= 2.5 V
- T otal Gate Charge (nC)
- Drain Current (A)
Gate Charge
2
2
4
1.5 V
3
3
6
2 V
V
GS
4
4
8
= 4.5 V
10
5
5
450
360
270
180
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8
7
6
5
4
3
2
1
0
90
0.0
0
- 50
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.5
V
V
GS
6
DS
T
Transfer Characteristics
V
I
J
0
- Gate-to-Source Voltage (V)
D
- Junction T emperature (°C)
GS
- Drain-to-Source Voltage (V)
= 3 A
1.0
25 °C
= 4.5 V
T
2 5
Capacitance
C
12
C
= 125 °C
oss
1.5
5 0
C
Vishay Siliconix
iss
18
7 5
2.0
Si3590DV
- 55 °C
www.vishay.com
100
24
2.5
125
3.0
150
30
3