IRF7301TRPBF International Rectifier, IRF7301TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7301TRPBF
• Description: MOSFET 2N-CH 20V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7301TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 13.3 nC
• Continuous Drain Current Id: 5.2A
• Power Dissipation Pd: 2W
• No. Of Pins: 8
• Drain Source On Resistance @ 2.7v: 70mohm
• Drain Source On Resistance @ 4.5v: 50mohm
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7301PBFTR

1200
100
900
600
300
0.1
10
1
0
0.0
1
T = 150°C
V
V
J
SD
DS
0.5
C
C
C
iss
oss
rss
V
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
T = 25°C
J
1.0
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
1.5
, C
ds
SHORTED
2.0
V
GS
= 0V
100
2.5
A
A
100
10
10
8
6
4
2
0
1
0.1
0
I
V
D
T
T
Single Pulse
DS
A
J
= 2.6A
= 25 C
= 150 C
= 16V
OPERATION IN THIS AREA LIMITED
V
DS
Q , Total Gate Charge (nC)
°
5
°
G
, Drain-to-Source Voltage (V)
1
10
BY R
DS(on)
FOR TEST CIRCUIT
15
SEE FIGURE 12
10
100us
1ms
10ms
20
100
25
A