FW342-TL-E SANYO, FW342-TL-E Datasheet

FW342-TL-E

Manufacturer Part Number

FW342-TL-E

Description

MOSFET N/P-CH 30V 6/5A 8-SOP

Manufacturer

SANYO

Datasheet

1.FW342-TL-E.pdf (6 pages)

Specifications of FW342-TL-E

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

33 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

6A, 5A

Gate Charge (qg) @ Vgs

16nC @ 10V

Input Capacitance (ciss) @ Vds

850pF @ 10V

Power - Max

1.8W

Mounting Type

Surface Mount

Package / Case

8-SOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Vgs(th) (max) @ Id

Other names

869-1167-2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FW342-TL-E

Manufacturer:

SANYO/三洋

Quantity:

20 000

Current page: 1 of 6
Download datasheet (56Kb)

Ordering number : ENN7912

FW342

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : W342

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW 10s)

Drain Current (PW 100ms)

Drain Current (PW 10 s)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

[N-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

For motor drives, inverters.

Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage

contained in a single package.

High-density mounting.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V DSS

V GSS

I GSS

I DSS

Tstg

I DP

Tch

P T

yfs

P D

I D

I D =1mA, V GS =0

V DS =30V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =6A

I D =6A, V GS =10V

I D =3A, V GS =4.5V

I D =3A, V GS =4V

duty cycle 1%

Mounted on a ceramic board

(1500mm

Mounted on a ceramic board

(1500mm

FW342

0.8mm)1unit, PW 10s

0.8mm), PW 10s

Conditions

N-channel

min

D2004 TS IM TA-101197

1.2

4.6

--55 to +150

Ratings

150

1.8

2.2

typ

7.8

P-channel

Continued on next page.

max

--5.5

--30

--20

--5

--9

2.6

No.7912-1/6

Unit

Related parts for FW342-TL-E

FW342-TL-E Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FW342 Symbol Conditions V DSS V GSS ...

Page 2

... Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm 2129 5.0 1.27 0.595 0.43 FW342 Symbol Conditions Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit ...

Page 3

... Gate-to-Source Voltage FW342 [P-channel] --10V OUT FW342 S [Nch] 0.6 0.7 0.8 0.9 1.0 IT07380 [Nch] Ta= IT07382 --15V -- OUT PW= FW342 P 6 =10V 5.0 4.0 3.0 2.0 1 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage (on --60 --40 -- Ambient Temperature [Nch] 3.0 3.5 4 ...

Page 4

... Drain Current =10V = Total Gate Charge --5.0 --4.0 --3.0 --2.0 --1 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage FW342 [Nch IT07384 [Nch =15V =10V 1000 100 IT07386 [Nch 1.0 7 Operation in this area 5 is limited (on 0.1 7 ...

Page 5

... Gate-to-Source Voltage --10V 1 --0.1 --1.0 Drain Current Time -- --15V --10V 100 (on --0.1 --1.0 Drain Current -- --10V -- --5A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge FW342 [Pch] 140 Ta=25 C 120 100 --12 --14 --16 --60 --40 IT07392 [Pch] -- --1 --0 --0. --0.2 --10 IT07394 [Pch 1000 100 --10 IT07396 [Pch -- --1 ...

Page 6

... Allowable Power Dissipation(FET 2 Note on usage : Since the FW342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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