NDS9947 Fairchild Semiconductor, NDS9947 Datasheet
NDS9947
Manufacturer Part Number
NDS9947
Description
MOSFET 2P-CH 20V 3.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.NDS9947.pdf
(5 pages)
Specifications of NDS9947
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
542pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9947TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDS9947
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS9947-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NDS9947
Dual 20V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (–4.5V to – 20V).
Applications
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
NDS9947
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
D
D2
advanced
SO-8
D
– Continuous
– Pulsed
D1
NDS9947
D
Device
D1
Parameter
S2
S
PowerTrench
G2
S
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
–3.5 A, –20 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
Q1
Q2
–
12mm
R
R
Ratings
55 to +175
DS(ON)
DS(ON)
–
–
–
135
1.6
1.0
0.9
78
40
3.5
20
2
20
15
= 100 m
= 190 m
4
3
2
1
@ V
@ V
May 2002
2500 units
NDS9947 Rev B(W)
GS
GS
Quantity
= –10 V
= –4.5 V
Units
C/W
W
V
V
A
C
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NDS9947 Summary of contents
Page 1
... Reel Size 13’’ May 2002 R = 100 –10 V DS(ON 190 –4.5 V DS(ON Ratings Units – – A 3.5 – 1.6 1.0 0.9 – +175 78 C/W 135 40 Tape width Quantity 12mm 2500 units NDS9947 Rev B(W) ...
Page 2
... Min Typ Max Units –20 V –23 mV/ C –1 A 100 nA –100 nA –1 –1.9 –3 V 4.5 mV 100 m 70 190 63 160 – 542 pF 153 9 2.2 nC 1.7 nC –2.1 A –0.8 –1 135°C/W when mounted on a minimum pad. NDS9947 Rev B(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.0V GS -4.0V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDS9947 Rev B( 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 NDS9947 Rev B(W) 30 1000 2 1000 ...
Page 5
CROSSVOLT â â â â Rev. H5 ...