SI4834BDY-T1-E3 Vishay, SI4834BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4834BDY-T1-E3
• Description: MOSFET DUAL N-CH 30V 5.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4834BDY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4834BDY-T1-E3TR

Si4834BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.1
0.4
0.2
0.0
20
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
T
V
J
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
- Temperature (°C)
25
0.6
50
I
D
= 250 µA
75
0.8
0.01
100
0.1
T
10
J
100
1
0.1
= 25 °C
Limited by R
1.0
* V
Safe Operating Area, Junction-to-Foot
125
DS
> minimum V
V
150
1.2
DS
DS(on)
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
*
GS
at which R
DS(on)
10
0.06
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
is specified
10 -
0
3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
10 -
V
GS
2
- Gate-to-Source Voltage (V)
4
I
D
Time (s)
S09-0869-Rev. D, 18-May-09
= 7.5 A
10 -
Document Number: 72064
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