SI7945DP-T1-E3 Vishay, SI7945DP-T1-E3 Datasheet

MOSFET DUAL P-CH 30V 8-SOIC

SI7945DP-T1-E3

Manufacturer Part Number
SI7945DP-T1-E3
Description
MOSFET DUAL P-CH 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7945DP-T1-E3

Transistor Polarity
Dual P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 10.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-10.9A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7945DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7945DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
Ordering Information: Si7945DP-T1-E3 (Lead (Pb)-free)
V
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
- 30
(V)
8
D1
6.15 mm
7
0.031 at V
0.020 at V
D1
6
R
D2
DS(on)
PowerPAK SO-8
Bottom View
5
Si7945DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
D2
= - 4.5 V
(Ω)
= - 10 V
1
J
a
S1
= 150 °C)
a
Dual P-Channel 30-V (D-S) MOSFET
2
G1
3
S2
- 10.9
I
D
- 8.8
5.15 mm
a
4
(A)
G2
a
b, c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
(Typ.)
49
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Battery and Load Switching
Symbol
Symbol
T
R
Available
New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile
- Notebook PCs
- Game Systems
- Set-Top Box
R
J
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
G
1
P-Channel MOSFET
®
Power MOSFETs
Typical
- 10.9
10 s
- 8.7
- 2.9
3.5
2.2
2.5
26
60
D
S
1
1
- 55 to 150
± 20
- 30
- 30
260
G
Steady State
2
Maximum
P-Channel MOSFET
- 7.0
- 5.6
- 1.2
1.4
0.9
3.1
35
85
Vishay Siliconix
D
S
Si7945DP
2
2
®
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI7945DP-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7945DP-T1-E3 (Lead (Pb)-free) Si7945DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7945DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72090 S09-0227-Rev. D, 09-Feb-09 3500 3000 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si7945DP Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 10 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si7945DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 - 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited by R DS(on on) Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72090. Document Number: 72090 S09-0227-Rev. D, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7945DP Vishay Siliconix - - www.vishay.com 1 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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