IRF7307PBF International Rectifier, IRF7307PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7307PBF
• Description: MOSFET N+P 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7307PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
1200
10
100
900
600
300
1
10
0.1
1
0
1.5
TOP
BOTTOM 1.5V
1
2.0
V
V
V
DS
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
GS
DS
C
C
C
, Drain-to-Source Voltage (V)
oss
rss
T = 25°C
V
C
C
C
iss
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
J
2.5
GS
iss
rss
oss
1
= 0V,
= C
= C
= C
1.5V
3.0
gs
ds
gd
T = 150°C
J
+ C
+ C
10
3.5
20µs PULSE WIDTH
T = 25°C
V
20µs PULSE WIDTH
gd
gd
f = 1MHz
J
DS
, C
10
= 15V
4.0
ds
SHORTED
4.5
100
5.0
100
A
A
A
1000
100
10
2.0
1.5
1.0
0.5
0.0
10
1
8
6
4
2
0
0.1
-60 -40 -20
0
TOP
BOTTOM 1.5V
I
I
V
D
D
DS
= 4.3A
= 2.6A
= 16V
V
T , Junction Temperature (°C)
DS
J
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
Q , Total Gate Charge (nC)
5
, Drain-to-Source Voltage (V)
G
0
1
20
10
40
60
1.5V
20µs PULSE WIDTH
T = 150°C
J
FOR TEST CIRCUIT
15
80 100 120 140 160
SEE FIGURE 11
10
V
GS
20
= 4.5V
100
25
A
A
A